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  ? semiconductor components industries, llc, 2014 march, 2014 ? rev. 2 1 publication order number: NCP152/d NCP152 dual 150 ma, low i q , low dropout voltage regulator the NCP152 is 150 ma, dual output linear voltage regulator that provides a very stable and accurate voltage with very low noise and high power supply rejection ratio (psrr) suitable for rf applications. the device doesn?t require any additional noise bypass capacitor to achieve very low noise performance. in order to optimize performance for battery operated portable applications, the NCP152 employs the adaptive ground current feature for low ground current consumption during light?load conditions. features ? operating input voltage range: 1.9 v to 5.25 v ? two independent output voltages: (for details please refer to the ordering information section) ? very low dropout: 150 mv typical at 150 ma ? low iq of typ. 50  a per channel ? high psrr: 75 db at 1 khz ? two independent enable pins ? thermal shutdown and current limit protections ? stable with a 0.22  f ceramic output capacitor ? available in xdfn6 1.2 x 1.2 mm package ? active output discharge for fast output t urn?off ? these are pb?free devices typical applications ? smartphones, tablets, wireless handsets ? wireless lan, bluetooth ? , zigbee ? interfaces ? other battery powered applications in en1 en2 out2 out1 gnd NCP152 v out2 v out1 c out2 0.22  f c out1 0.22  f c in1 0.22  f v in1 figure 1. typical application schematic xdfn6, 1.2x1.2 case 711at marking diagram http://onsemi.com see detailed ordering and shipping information on page 17 o f this data sheet. ordering information xdfn6 (top view) 6 5 4 1 2 3 out1 en1 pin connections out2 gnd in en2 gnd x = specific device code m = date code x m
NCP152 http://onsemi.com 2 figure 2. simplified schematic block diagram gnd en2 thermal shutdown mosfet driver with current limit *active discharge en1 enable logic en1 out1 in discharge *active en2 enable logic thermal shutdown mosfet driver with current limit out2 bandgap reference pin function description pin no. xdfn6 pin name description 1 out1 regulated output voltage of the first channel. a small 0.22  f ceramic capacitor is needed from this pin to ground to assure stability. 2 out2 regulated output voltage of the second channel. a small 0.22  f ceramic capacitor is needed from this pin to ground to assure stability. 3 gnd power supply ground. soldered to the copper plane allows for effective heat dissipation. 4 en2 driving en2 over 0.9 v turns?on out2. driving en below 0.4 v turns?off the out2 and activates the active discharge. 5 in input pin common for both channels. it is recommended to connect 0.22  f ceramic capacitor close to the device pin. 6 en1 driving en1 over 0.9 v turns?on out1. driving en below 0.4 v turns?off the out1 and activates the active discharge. ? ep exposed pad must be tied to ground. soldered to the copper plane allows for effective thermal dissipation.
NCP152 http://onsemi.com 3 absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 v to 6 v v output voltage v out1 , v out2 ?0.3 v to vin + 0.3 v or 6 v v enable inputs v en1 , v en2 ?0.3 v to vin + 0.3 v or 6 v v output short circuit duration t sc indefinite s maximum junction temperature t j(max) 150 c storage temperature t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristis and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22?a114 esd machine model tested per eia/jesd22?a115 latchup current maximum rating tested per jedec standard: jesd78. thermal characteristics (note 3) rating symbol value unit thermal characteristics, xdfn6 1.2 x 1.2 mm, thermal resistance, junction?to?air thermal characterization parameter, junction?to?lead (pin 2)  ja  jl 170 c/w 3. single component mounted on 1 oz, fr4 pcb with 645mm2 cu area.
NCP152 http://onsemi.com 4 electrical characteristic ?40 c t j 85 c; v in = v out(nom) + 1 v or 2.5 v, whichever is greater; v en = 0.9 v, i out = 1 ma, c in = c out = 0.22  f. typical values are at t j = +25 c. min/max values are specified for t j = ?40 c and t j = 85 c respectively. (note 4) parameter test conditions symbol min typ max unit operating input voltage v in 1.9 5.25 v output voltage accuracy ?40 c t j 85 c v out > 2 v v out ?2 +2 % v out 2 v ?60 +60 mv line regulation v out + 0.5 v or 2.5 v v in 5 v reg line 0.02 0.1 %/v load regulation i out = 1 ma to 150 ma reg load 15 50 mv dropout voltage (note 5) i out = 150 ma v out(nom) = 1.5 v v do 370 500 mv v out(nom) = 1.8 v 270 400 v out(nom) = 2.6 v 175 260 v out(nom) = 2.8 v 160 260 v out(nom) = 3.0 v 150 220 v out(nom) = 3.3 v 140 220 output current limit v out = 90% v out(nom) i cl 150 ma quiescent current i out = 0 ma, en1 = v in , en2 = 0 v or en2 = v in , en1 = 0 v i q 50 100  a i out1 = i out2 = 0 ma, v en1 = v en2 = v in i q 85 200  a shutdown current (note 6) v en 0.4 v, v in = 5.25 v i dis 0.1 1  a en pin threshold voltage high threshold low threshold v en voltage increasing v en voltage decreasing v en_hi v en_lo 0.9 0.4 v en pin input current v en = v in = 5.25 v i en 0.3 1.0  a power supply rejection ratio v in = v out+ 1 v for v out > 2 v, v in = 2.5 v, for v out 2 v, i out = 10 ma f = 1 khz psrr 75 db output noise voltage f = 10 hz to 100 khz v n 75  v rms active discharge resistance v in = 4 v, v en < 0.4 v r dis 50  thermal shutdown temperature temperature increasing from t j = +25 c t sd 160 c thermal shutdown hysteresis temperature falling from t sd t sdh ? 20 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. performance guaranteed over the indicated operating temperature range by design and/or characterization. production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 5. characterized when v out falls 100 mv below the regulated voltage at v in = v out(nom) + 1 v. 6. shutdown current is the current flowing into the in pin when the device is in the disable state.
NCP152 http://onsemi.com 5 typical characteristics 1.85 v out , output voltage (v) t j , junction temperature ( c) ?40 i out = 1 ma i out = 150 ma v in = 2.8 v v out = 1.8 v c in = 0.22  f c out = 0.22  f figure 3. output voltage vs. temperature v out = 1.8 v 2.45 v out , output voltage (v) t j , junction temperature ( c) figure 4. output voltage vs. temperature v out = 2.8 v v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f i out = 1 ma i out = 150 ma i gnd , ground current (  a) i out , output current (ma) 0.001 figure 5. ground current vs. output current ? one channel load 450 400 350 300 250 200 150 100 50 0 1000 0.01 0.1 1 10 100 v in = 3.8 v v out = 2.8 v v en1 = v en2 = v in c in = 0.22  f c out = 0.22  f 1.84 1.83 1.82 1.81 1.80 1.79 1.78 1.77 1.76 1.75 ?25 ?10 5 20 35 50 65 80 95 ?40 ?25 ?10 5 20 35 50 65 80 95 2.44 2.43 2.42 2.41 2.40 2.39 2.38 2.37 2.36 2.35 t j = 85 c t j = 25 c t j = ?40 c i gnd , ground current (  a) i out , output current (ma) 0 figure 6. ground current vs. output current ? different load combinations 750 150 15 30 45 60 135 v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f v en1 = 0 v, v en2 = v in, out1?load 105 75 90 120 675 600 525 450 375 300 225 150 75 0 v en1 = v en2 = v in , out1?load v en1 = v en2 = v in, out1?load out2?load 100 i q , quiescent current (  a) v in , input voltage (v) 0.0 0.5 figure 7. quiescent current vs. input voltage? both outputs on 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f 25 c ?40 c 85 c 90 80 70 60 50 40 30 20 10 0 0.05 reg line , line regulation (%/v) t j , junction temperature ( c) figure 8. line regulation vs. temperature v out = 1.8 v ?40 ?25 ?10 5 95 80 65 50 35 20 v in = 2.5 v to 5.25 v v out = 1.8 v i out = 1 ma c in = 0.22  f c out = 0.22  f 0.04 0.03 0.02 0.01 0 ?0.01 ?0.02 ?0.03 ?0.04 ?0.05
NCP152 http://onsemi.com 6 typical characteristics reg line , line regulation (%/v) t j , junction temperature ( c) figure 9. line regulation vs. temperature v out = 2.8 v 20 reg load , load regulation (mv) t j , junction temperature ( c) figure 10. load regulation vs. temperature v out = 1.8 v 10 reg load , load regulation (mv) t j , junction temperature ( c) figure 11. load regulation vs. temperature v out = 2.8 v 350 v drop , dropout voltage (mv) i out , output current (ma) 0 figure 12. dropout voltage vs. output current v out = 1.8 v v in = 2.8 v v out = 1.8 v c in = 0.22  f c out = 0.22  f 200 v drop , dropout voltage (mv) i out , output current (ma) figure 13. dropout voltage vs. output current v out = 2.8 v v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f 350 v drop , dropout voltage (mv) t j , junction temperature ( c) figure 14. dropout voltage vs. temperature v out = 1.8 v 0 v in = 2.5 v v out = 1.8 v i out = 1 ma to 150 ma c in = 0.22  f c out = 0.22  f v in = 3.8 v v out = 2.8 v i out = 1 ma to 150 ma c in = 0.22  f c out = 0.22  f 9 8 7 6 5 4 3 2 1 0 t j = 85 c t j = ?40 c t j = 25 c 150 15 30 45 60 75 90 135 120 105 v in = 3.8 v to 5.25 v v out = 2.8 v i out = 1 ma c in = 0.22  f c out = 0.22  f 0.05 0.04 0.03 0.02 0.01 0 ?0.01 ?0.02 ?0.03 ?0.04 ?0.05 ?40 ?25 ?10 5 95 80 65 50 35 20 18 16 14 12 10 8 6 4 2 ?40 ?25 ?10 5 95 80 65 50 35 20 ?40 ?25 ?10 5 95 80 65 50 35 20 315 280 245 210 175 140 105 70 35 0 0 150 15 30 45 60 75 90 135 120 105 t j = 85 c t j = ?40 c t j = 25 c 180 160 140 120 100 80 60 40 20 0 v in = 2.8 v v out = 1.8 v c in = 0.22  f c out = 0.22  f ?40 ?25 ?10 5 95 80 65 50 35 20 i out = 0 ma i out = 150 ma i out = 75 ma 315 280 245 210 175 140 105 70 35 0
NCP152 http://onsemi.com 7 typical characteristics v drop , dropout voltage (mv) t j , junction temperature ( c) figure 15. dropout voltage vs. temperature v out = 2.8 v i out = 0 ma i out = 150 ma v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f 600 v drop , dropout voltage (mv) v out , output voltage (v) figure 16. dropout voltage vs. output voltage 0.9 1.2 1.5 1.8 2.1 3.6 3.3 3.0 2.7 2.4 i out = 75 ma ?40 ?25 ?10 5 95 80 65 50 35 20 200 180 160 140 120 100 80 60 40 20 0 500 400 300 200 100 0 400 i sc , short?circuit current (ma) t j , junction temperature ( c) v in = 3.8 v v out = 0 v c in = 0.22  f c out = 0.22  f figure 17. short?circuit current vs. temperature 300 i sc , short?circuit current (ma) v in , input voltage (v) 2.4 6.0 figure 18. short?circuit current vs. input voltage v out = 0 v c in = 0.22  f c out = 0.22  f ?40 ?25 ?10 5 95 80 65 50 35 20 360 320 280 240 200 160 120 80 40 0 270 240 210 180 150 120 90 60 30 0 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 200 i dis , disable current (na) t j , junction temperature ( c) figure 19. disable current vs. temperature v in = 5.5 v v out = 2.8 v c in = 0.22  f c out = 0.22  f ?40 ?25 ?10 5 95 80 65 50 35 20 180 160 140 120 100 80 60 40 20 0 1 v en , enable voltage (v) t j , junction temperature ( c) figure 20. enable voltage threshold vs. temperature v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 off ?> on on ?> off ?40 ?25 ?10 5 95 80 65 50 35 20
NCP152 http://onsemi.com 8 typical characteristics 500 i en , enable current (na) t j , junction temperature ( c) figure 21. current to enable pin vs. temperature v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f 450 400 350 300 250 200 150 100 50 0 ?40 ?25 ?10 5 95 80 65 50 35 20 50 r dis , discharge resistivity (  ) t j , junction temperature ( c) figure 22. discharge resistance vs. temperature ?40 ?25 ?10 5 95 80 65 50 35 20 v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f 45 40 35 30 25 20 15 10 5 0 100 rr, ripple rejection (db) frequency (khz) figure 23. power supply rejection ratio, v out = 1.2 v, c out = 0.22  f rr, ripple rejection (db) frequency (khz) figure 24. power supply rejection ratio, v out = 1.2 v, c out = 1  f 0.1 i out = 1 ma i out = 10 ma i out = 100 ma i out = 150 ma v in = 2.5 v v out = 1.2 v c in = none c out = 0.22  f 1 10000 1000 10 100 100 0.1 1 10000 1000 10 100 90 80 70 60 50 40 30 20 10 0 90 80 70 60 50 40 30 20 10 0 i out = 1 ma i out = 10 ma i out = 100 ma i out = 150 ma v in = 2.5 v v out = 1.2 v c in = none c out = 1  f 100 rr, ripple rejection (db) frequency (khz) figure 25. power supply rejection ratio, v out = 2.8 v, c out = 0.22  f rr, ripple rejection (db) frequency (khz) figure 26. power supply rejection ratio, v out = 2.8 v, c out = 1  f 0.1 i out = 1 ma i out = 10 ma i out = 100 ma i out = 150 ma v in = 3.8 v v out = 2.8 v c in = none c out = 0.22  f 1 10000 1000 10 100 100 0.1 1 10000 1000 10 100 90 80 70 60 50 40 30 20 10 0 90 80 70 60 50 40 30 20 10 0 i out = 1 ma i out = 10 ma i out = 100 ma i out = 150 ma v in = 3.8 v v out = 2.8 v c in = none c out = 1  f
NCP152 http://onsemi.com 9 figure 27. output voltage noise spectral density for v out = 1.8 v, c out = 220 nf frequency (khz) 1000 10 1 0.1 0.01 10 figure 28. output voltage noise spectral density for v out = 1.8 v, c out = 1  f figure 29. output voltage noise spectral density for v out = 2.8 v, c out = 220 nf output voltage noise (  v/rthz) v in = 2.8 v v out = 1.8 v c in = 0.22  f c out = 0.22  f mlcc, x7r, 1206 size 1 ma 68.07 67.07 10 ma 67.30 66.31 150 ma 69.74 68.80 10 hz ? 100 khz 100 hz ? 100 khz rms output noise (  v) i out frequency (khz) output voltage noise (  v/rthz) frequency (khz) output voltage noise (  v/rthz) 100 1000 10 1 0.1 0.01 100 1000 10 1 0.1 0.01 100 i out = 1 ma i out = 150 ma 1 ma 76.23 75.33 10 ma 67.12 66.12 150 ma 69.06 68.12 10 hz ? 100 khz 100 hz ? 100 khz rms output noise (  v) i out i out = 10 ma i out = 1 ma i out = 150 ma 1 ma 93.42 91.99 10 ma 92.88 91.45 150 ma 94.67 93.26 10 hz ? 100 khz 100 hz ? 100 khz rms output noise (  v) i out i out = 10 ma i out = 1 ma i out = 150 ma i out = 10 ma 1 0.1 0.01 0.001 10 1 0.1 0.01 0.001 v in = 2.8 v v out = 1.8 v c in = 1  f c out = 1  f mlcc, x7r, 1206 size 10 1 0.1 0.01 0.001 v in = 3.8 v v out = 2.8 v c in = 0.22  f c out = 0.22  f mlcc, x7r, 1206 size
NCP152 http://onsemi.com 10 figure 30. output voltage noise spectral density for v out = 2.8 v, c out = 1  f frequency (khz) output voltage noise (  v/rthz) 1000 10 1 0.1 0.01 100 1 ma 102.14 100.86 10 ma 93.03 91.59 150 ma 94.74 93.12 10 hz ? 100 khz 100 hz ? 100 khz rms output noise (  v) i out i out = 10 ma i out = 1 ma i out = 150 ma 10 1 0.1 0.01 0.001 v in = 3.8 v v out = 2.8 v c in = 1  f c out = 1  f mlcc, x7r, 1206 size 100 esr (  ) i out , output current (ma) 0 figure 31. output capacitor esr vs. output current 10 1 0.1 0.01 15 30 45 90 135 150 unstable operation stable operation 60 75 120 105 v out = 2.8 v v out = 1.8 v
NCP152 http://onsemi.com 11 typical characteristics v in = 3.8 v v out1 = disable v out2 = 1.2 v i out1 = 10 ma c out1 = c out2 = 220 nf 500 mv/div 1 v/div 50 ma/div i in 40  s/div v en v out2 500 mv/div 1 v/div 40  s/div 1 v/div v out1 i in v en v out2 v out1 v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma i out2 = 10 ma c out1 = c out2 = 220 nf 50 ma/div figure 32. enable turn?on response ? vr1 = off, vr2 = 10 ma figure 33. enable turn?on response ? vr1 = 10 ma, vr2 = 10 ma 1 v/div figure 34. enable turn?on response ? vr1 = off, vr2 = 150 ma 500 mv/div 1 v/div 50 ma/div 40  s/div 50 ma/div 500 mv/div 1 v/div figure 35. enable turn?on response ? vr1 = 10 ma, vr2 = 150 ma 40  s/div 1 v/div i in v en v out2 v out1 v in = 3.8 v v out1 = disable v out2 = 1.2 v i out2 = 150 ma c out1 = c out2 = 220 nf 1 v/div i in v en v out2 v out1 v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma i out2 = 150 ma c out1 = c out2 = 220 nf 500 mv/div 20 mv/div figure 36. line transient response ? rising edge, v en1 = 0 v, v en2 = v in , v out2 = 3.3 v, i out2 = 10 ma 2  s/div t rise = 1  s v in v out2 figure 37. line transient response ? falling edge, v en1 = 0 v, v en2 = v in , v out2 = 3.3 v, i out2 = 10 ma 2  s/div 500 mv/div t fall = 1  s v out2 v in v out1 v in = 3.8 v to 4.8 v i out2 = 10 ma c out1 = 220 nf c out2 = 220 nf 20 mv/div v out1 20 mv/div 20 mv/div v in = 4.8 v to 3.8 v i out2 = 150 ma c out1 = 220 nf c out2 = 220 nf
NCP152 http://onsemi.com 12 typical characteristics figure 38. line transient response ? rising edge, v en1 = 0 v, v en2 = v in , v out2 = 3.3 v, i out2 = 150 ma 500 mv/div 20 mv/div 2  s/div v in v out2 500 mv/div 20 mv/div figure 39. line transient response ? falling edge, v en1 = 0 v, v en2 = v in , v out2 = 3.3 v, i out2 = 150 ma 2  s/div v in v out1 50 ma/div 20 mv/div figure 40. load transient response ? rising edge, i out = 1 ma to 150 ma 2  s/div t rise = 1  s i out2 v out1 figure 41. load transient response ? falling edge, i out = 150 ma to 1 ma 10  s/div 20 mv/div t fall = 1  s v out1 20 mv/div figure 42. load transient response ? rising edge, i out = 0.1 ma to 150 ma 2  s/div t rise = 500 ns v out2 figure 43. load transient response ? falling edge, i out = 150 ma to 0.1 ma 10  s/div 20 mv/div t fall = 500 ns t rise = 1  s 50 ma/div i out2 50 ma/div i out2 50 ma/div v out1 20 mv/div v out2 t fall = 1  s 20 mv/div v in = 3.8 v to 4.8 v i out2 = 10 ma c out1 = 220 nf c out2 = 220 nf v in = 4.8 v to 3.8 v i out2 = 150 ma c out1 = 220 nf c out2 = 220 nf v out2 v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf 50 ma/div v out2 50 ma/div v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf 100 mv/div v out1 v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf v out2 i out2 v out1 100 mv/div v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf
NCP152 http://onsemi.com 13 typical characteristics 50 ma/div 20 mv/div figure 44. load transient response ? rising edge, i out = 50 ma to 150 ma 2  s/div t rise = 500 ns figure 45. load transient response ? falling edge, i out = 150 ma to 50 ma 2  s/div 20 mv/div t fall = 500 ns v out2 i out2 v out1 v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf 50 mv/div 50 mv/div v out2 i out2 v out1 v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf 50 ma/div 50 ma/div 20 mv/div v out1 i out1 v out2 v in = 4.3 v v out1 = 3.3 v v out2 = 3.0 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf 50 mv/div 50 ma/div 20 mv/div 50 mv/div v out1 i out1 v out2 v in = 4.3 v v out1 = 3.3 v v out2 = 3.0 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf figure 46. load transient response ? rising edge, i out = 0.1 ma to 150 ma 2  s/div figure 47. load transient response ? rising edge, i out = 1 ma to 150 ma 2  s/div figure 48. load transient response ? falling edge, i out = 150 ma to 1 ma 10  s/div 50 ma/div 20 mv/div 100 mv/div v out1 i out1 v out2 v in = 4.3 v v out1 = 3.3 v v out2 = 3.0 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf t rise = 500 ns t fall = 500 ns t rise = 1  s 50 ma/div 20 mv/div 100 mv/div v out1 i out1 v out2 v in = 4.3 v v out1 = 3.3 v v out2 = 3.0 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf t fall = 1  s figure 49. load transient response ? falling edge, i out = 150 ma to 0.1 ma 20  s/div
NCP152 http://onsemi.com 14 typical characteristics 50 ma/div 20 mv/div figure 50. load transient response ? rising edge, i out = 50 ma to 150 ma 2  s/div t rise = 1  s figure 51. load transient response ? falling edge, i out = 150 ma to 50 ma 2  s/div 20 mv/div t fall = 1  s v out1 i out1 v out2 50 ma/div v out1 v in v out2 v in = 4.3 v v out1 = 3.3 v v out2 = 3.0 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf 1 v/div 50 ma/div 500 mv/div v out1 i out1 v in = 5.5 v v out1 = 1.2 v v out2 = 3.0 v c in = c out1 = c out1 = 220 nf 100  s/div figure 52. turn?on/off ? slow rising v in 20 ms/div figure 53. short?circuit and thermal shutdown 10  s/div v out1 v en 50 mv/div 50 mv/div v in = 4.3 v v out1 = 3.3 v v out2 = 3.0 v i out1 = 10 ma c out1 = 220 nf c out2 = 220 nf v out1 i out1 v out2 figure 54. enable turn?off v in = 4.3 v v out1 = 2.8 v i out1 = 10 ma i out2 = 10 ma c in = c out1 = c out1 = 220 nf overheating full load thermal shutdown tsd cycling 500 mv/div 1 v/div t fall = 1  s c out = 220 nf c out = 1  f c out = 4.7  f v in = 3.8 v v out1 = 2.8 v v out2 = 1.2 v
NCP152 http://onsemi.com 15 applications information general the NCP152 is a dual output high performance 150 ma low dropout linear regulator. this device delivers very high psrr (75 db at 1 khz) and excellent dynamic performance as load/line transients. in connection with low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. each output is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. the NCP152 device is housed in xdfn?6 1.2 mm x 1.2 mm package which is useful for space constrains application. input capacitor selection (c in ) it is recommended to connect at least a 0.22  f ceramic x5r or x7r capacitor as close as possible to the in pin of the device. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto constant input voltage. there is no requirement for the min. or max. esr of the input capacitor but it is recommended to use ceramic capacitors for their low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. larger input capacitor may be necessary if fast and large load transients are encountered in the application. output decoupling (c out ) the NCP152 requires an output capacitor for each output connected as close as possible to the output pin of the regulator. the recommended capacitor value is 0.22  f and x7r or x5r dielectric due to its low capacitance variations over the specified temperature range. the NCP152 is designed to remain stable with minimum effective capacitance of 0.15  f to account for changes with temperature, dc bias and package s ize. especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied dc bias. there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 2  . larger output capacitors and lower esr could improve the load transient response or high frequency psrr. it is not recommended to use tantalum capacitors on the output due to their large esr. the equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. enable operation the NCP152 uses the dedicated en pin for each output channel. this feature allows driving outputs separately. if the en pin voltage is <0.4 v the device is guaranteed to be disabled. the pass transistor is turned?off so that there is virtually no current flow between the in and out. the active discharge transistor is active so that the output voltage v out is pulled to gnd through a 50  resistor. in the disable state the device consumes as low as typ. 10 na from the v in . if the en pin voltage >0.9 v the device is guaranteed to be enabled. the NCP152 regulates the output voltage and the active discharge transistor is turned?off. the both en pin has internal pull?down current source with typ. value of 300 na which assures that the device is turned?off when the en pin is not connected. in the case where the en function isn?t required the en should be tied directly to in. output current limit output current is internally limited within the ic to a typical 280 ma. the NCP152 will source this amount of current measured with a voltage drops on the 90% of the nominal v out . if the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 300 ma (typ). the current limit and short circuit protection will work properly over whole temperature range and also input voltage range. there is no limitation for the short circuit duration. this protection works separately for each channel. short circuit on the one channel do not influence second channel which will work according to specification. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sd ? 160 c typical), thermal shutdown event is detected and the affected channel is turn?off. second channel still working. the channel which is overheated will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu ? 140 c typical). once the device temperature falls below the 140 c the appropriate channel is enabled again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. the long duration of the short circuit condition to some output channel could cause turn?off other output when heat sinking is not enough and temperature of the other output reach t sd temperature. power dissipation as power dissipated in the NCP152 increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the NCP152 can handle is given by: p d(max)   125 c  t a   ja (eq. 1)
NCP152 http://onsemi.com 16 the power dissipated by the NCP152 for given application conditions can be calculated from the following equations: p d  v in  i gnd  i out1 v in  v out1
(eq. 2)  i out2 v in  v out2
figure 55.  ja vs. copper area (xdfn?6) 0.25 0.50 0.75 1.00 1.25 60 80 100 120 140 160 180 200 220 240 0 100 200 300 400 500 600 700 copper heat spreader area (mm 2 )  ja , junction?to?ambient thermal resistance ( c/w) p d(max) , maximum power dissipation (w) p d(max) , t a = 25 c, 2 oz cu p d(max) , t a = 25 c, 1 oz cu  ja , 1 oz cu  ja , 2 oz cu reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case that v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. power supply rejection ratio the NCP152 features very good power supply rejection ratio. if desired the psrr at higher frequencies in the range 100 khz ? 10 mhz can be tuned by the selection of c out capacitor and proper pcb layout. turn?on time the turn?on time is defined as the time period from en assertion to the point in which v out will reach 98% of its nominal value. this time is dependent on various application conditions such as v out(nom) , c out , t a . pcb layout recommendations to obtain good transient performance and good regulation characteristics place input and output capacitors close to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 capacitors. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from the equation above (equation 2). expose pad should be tied the shortest path to the gnd pin.
NCP152 http://onsemi.com 17 ordering information device voltage option (out1/out2) marking marking rotation package shipping ? NCP152mx150280tcg 1.5 v/2.8 v d 0 xdfn-6 (pb-free) 3000 / tape & reel NCP152mx180280tcg 1.8 v/2.8 v a 0 NCP152mx180150tcg 1.8 v/1.5 v q 0 NCP152mx280120tcg 2.8 v/1.2 v v 0 NCP152mx280180tcg 2.8 v/1.8 v a 90 NCP152mx300280tcg 3.0 v/2.8 v f 0 NCP152mx300180tcg 3.0 v/1.8 v j 0 NCP152mx300300tcg 3.0 v/3.0 v p 0 NCP152mx330180tcg 3.3 v/1.8 v e 0 NCP152mx330280tcg 3.3 v/2.8 v k 0 NCP152mx330330tcg 3.3 v/3.3 v l 0 NCP152mx330300tcg 3.3 v/3.0 v 2 0 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NCP152 http://onsemi.com 18 package dimensions xdfn6 1.2x1.2, 0.4p case 711at issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.25mm from terminal tips. 4. coplanarity applies to the pad as well as the terminals. a seating plane 0.05 c a a1 2x 2x 0.05 c dim a min max millimeters 0.30 0.45 a1 0.00 0.05 b 0.13 0.23 d e e l pin one reference 0.05 c 0.05 c note 3 l e b 3 6 6x 1 4 mounting footprint* 0.15 0.25 bottom view e2 dimensions: millimeters 0.35 6x 0.24 6x 1.40 0.40 pitch *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. e2 0.20 0.40 top view b side view note 4 recommended c 6x a m 0.10 b c package outline d2 0.84 1.04 l1 1.20 bsc 1.20 bsc 0.40 bsc 0.05 ref d2 1.08 0.40 d e detail b detail a detail a optional construction l ??? 1 l1 6x on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NCP152/d zigbee is a registered trademark of zigbee alliance. bluetooth is a registered trademark of bluetooth sig. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative


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